MMD80R900P

MMD80R900P Datasheet MMD80R900P 800V 0.9Ω N-channel MOSFET  Description MMD80R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 850 0.9 3 6 17.6 Unit V Ω V A nC  Package & Internal Circuit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMD80R900PRH 80R900P Temp. Range -55 ~ 150℃ Package TO-252 (D-PAK) Mar. 2014 Revision 1.0 1 Pack...