MMD60R580Q

MMD60R580Q Datasheet MMD60R580Q 600V 0.58Ω N-channel MOSFET  Description MMD60R580Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 13 Unit V Ω V A nC  Package & Internal Circuit D D G S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMD60R580QRH Marking Temp. Range 60R580Q -55 ~ 150℃ Package TO-252 Aug. 2016 Revision 1.0 1 Packing Reel ...