DatasheetsPDF.com

MMBV109 Datasheet

Part Number MMBV109
Manufacturers Motorola
Logo Motorola
Description VOLTAGE VARIABLE CAPACITANCE DIODE
Datasheet MMBV109 DatasheetMMBV109 Datasheet (PDF)

MMBV109 CASE 318-02/03, STYLE 8 SOT-23 (TO-236AA/AB) VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Symbol VR if THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/\ = 25°C Derate above 25°C PD Storage Temperature Tstq •Thermal Resistance Junction to Ambient R 0JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 30 200 Max 350 2.8 150 357 Unit Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS 0a = 2.

  MMBV109   MMBV109






Part Number MMBV109LT1
Manufacturers Motorola
Logo Motorola
Description Silicon Epicap Diodes
Datasheet MMBV109 DatasheetMMBV109LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package 31 Cathode Anode SC–70/SOT–323 31 Cathode Anode SOT–23 21 Cathode Anode TO–92 MAXIMUM RATINGS Rating Symbol MBV109T1 MMBV109LT1 MV209 Unit Reverse.

  MMBV109   MMBV109







Part Number MMBV109LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Epicap Diodes
Datasheet MMBV109 DatasheetMMBV109LT1 Datasheet (PDF)

www.DataSheet4U.com MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package Pb−Free Packages are Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode 1 Anode MAXIMUM RATINGS.

  MMBV109   MMBV109







Part Number MMBV109LT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Silicon Epicap Diode
Datasheet MMBV109 DatasheetMMBV109LT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package MMBV109LT1 MBV109T1 MV209 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Symbol Value MBV109T1 MMBV109LT1 MV209 Reverse Voltag.

  MMBV109   MMBV109







Part Number MMBV105GLT1
Manufacturers Motorola
Logo Motorola
Description Silicon Tuning Diode
Datasheet MMBV109 DatasheetMMBV105GLT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio MMBV105GLT1 Motorola Preferred Device 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE 3 Cathode 1 Anode 3 1 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Symbol Value Reverse Voltage For.

  MMBV109   MMBV109







VOLTAGE VARIABLE CAPACITANCE DIODE

MMBV109 CASE 318-02/03, STYLE 8 SOT-23 (TO-236AA/AB) VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Symbol VR if THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/\ = 25°C Derate above 25°C PD Storage Temperature Tstq •Thermal Resistance Junction to Ambient R 0JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 30 200 Max 350 2.8 150 357 Unit Vdc mAdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS 0a = 25°C unless otherwise noted] Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (Ir = 10 /uAdc) Reverse Voltage Leakage Current (Vr = 28 Vdc) Series Inductance (f = 250 MHz) Case Capacitance (f = 1.0 MHz) Diode Capacitance Temperature Coefficient (Vr = 3.0 Vdc, f = 1.0 MHz) Figure of Merit (V R = 3.0 Vdc, f = 50 MHz) Diode Capacitance (Vr = 3.0 Vdc, f = 1.0 MHz) — —V (BR) 30 Vdc — —IR 0.1 /uAdc — -LS 3.0 nH — -cc 0.1 pF — -TCC .


2017-06-01 : P6SMBJ60A    P6SMBJ60    P6SMBJ58A    P6SMBJ54A    P6SMBJ58    P6SMBJ54    P6SMBJ51A    P6SMBJ51    P6SMBJ48    P6SMBJ48A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)