MMBV105GLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio MMBV105GLT1 Motorola Preferred Device 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE 3 Cathode 1 Anode 3 1 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) MAXIMUM RATINGS Rating Symbol Value Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C VR 30 IF 200 PD 225 1.8 Junction Temperature Storage Temperature Range DEVICE MARKING TJ +125 Tstg – 55 to +150 MMBV105GLT1 = M4E ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) Unit Vdc mAdc mW mW/°C °C °C Symbol V(BR)R IR Device Type MMBV105GLT1 CT VR = 25 Vdc, f = 1.0 MHz pF Min Max 1.5 2...