MMBTA93LT1G

MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol 92 93 Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current — Continuous DEVICE MARKING VCEO VCBO VEBO IC −300 −200 −300 −200 −5.0 −5.0 −500 Vdc Vdc Vdc mAdc MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA Junction and Storage Temperature TJ, Tstg 417 −55 to +150 °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional...