MMBTA92LT1G, MMBTA93LT1G
High Voltage Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR F...
MMBTA92LT1G, MMBTA93LT1G
High
Voltage Transistors
PNP Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol 92
93 Unit
Collector −Emitter
Voltage Collector −Base
Voltage Emitter −Base
Voltage Collector Current — Continuous DEVICE MARKING
VCEO VCBO VEBO
IC
−300 −200 −300 −200 −5.0 −5.0
−500
Vdc Vdc Vdc mAdc
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2)
Alumina Substrate,(2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W 300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient RqJA
Junction and Storage Temperature
TJ, Tstg
417
−55 to +150
°C/W °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional...