MMBT918LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT918LT1/D VHF/UHF Transistor NPN Silicon 1 BASE MMBT918LT1 COLLECTOR 3 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT918LT1 = M3B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 — — — — 50 Vdc Vdc Vdc nAdc Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT918LT1 ELECTRIC...