UNISONIC TECHNOLOGIES CO., LTD
MMBT9012
NPN SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-...
UNISONIC TECHNOLOGIES CO., LTD
MMBT9012
NPN SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
3
FEATURES
*High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013
1 2
SOT-23
(JEDEC TO-236)
ORDERING INFORMATION
Ordering Number
MMBT9012G-x-AE3-R
Note: Pin Assignment: E: Emitter
B: Base
Package
SOT-23 C: Collector
Pin Assignment 123 EBC
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-020.B
MMBT9012
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PC TJ TSTG
RATING -40 -20 -5 -500 225 150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
UNIT V V V mA
mW C C
PARAMETER Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current
DC Current Gain
Collector-emitter saturation
voltage Base-emitter saturation
voltage Base-emitter on
voltage
SYMBOL BVCBO BVCEO BVEBO
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE(on)
TEST CONDITIONS IC= -100μA, IE=0 IC= -1mA, IB=0 IE= -100μA, IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -1V, IC= -50mA VCE= -1V, IC= -500mA IC=...
