MMBT6520LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6520LT1/D High Voltage Transistor PNP Silicon COLLECTOR 3 1 BASE MMBT6520LT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Base Current Collector Current — Continuous Symbol VCEO VCBO VEBO IB IC Value –350 –350 –5.0 –250 –500 Unit Vdc Vdc Vdc mA mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT6520LT1 = 2Z THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mA) Collector–Base Breakdown Voltage (IC = –100 µA) Emitter–Base Breakdown Voltage (IE = –10 µA) Collector Cutoff Current (VCB = –250 V) Emitter Cutoff Current (VEB = –4.0 V) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –350 –350 –5.0 — — — — — –50 –50 Vdc Vdc Vdc nA nA Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recomme...