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MMBT589

GME

PNP General Purpose Transistor

PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Also available in lead free version. Pb...


GME

MMBT589

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Description
PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Also available in lead free version. Pb Lead-free APPLICATIONS  High current surface mount PNP silicon switching transistor for load management in portable appilications. Production specification MMBT589 ORDERING INFORMATION Type No. Marking MMBT589 589 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO collector-base voltage -50 VCEO collector-emitter voltage -30 VEBO emitter-base voltage -5 IC collector current (DC) -1.0 ICM PC RθJA Tj ,Tstg Collector Current-Peak Collector dissipation Thermal Resistance, Junction to Ambient junction and storage temperature -2.0 0.31 403 -55 to +150 UNIT V V V A A W °C/W °C C118 Rev.B www.gmesemi.com 1 Production specification PNP General Purpose Transistor MMBT589 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX....




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