MMBT5550LT1

High Voltage Transistors NPN Silicon 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C 1 BASE Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc MMBT5550LT1 MMBT5551LT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C DEVICE MARKING MMBT5550LT1 = M1F, MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) (I C ...