MMBT5179

MPS5179 / MMBT5179 / PN5179 Discrete POWER & Signal Technologies MPS5179 MMBT5179 C PN5179 E C B TO-92 E SOT-23 Mark: 3C B C E TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 12 20 2.5 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max PN/MPS5179 350 2.8 357 *MMBT5179 225 1.8 556 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 5179, Rev B MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Electrical Characteristics Symbol Para...