MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT4401LT1
Motorola Preferred Device
3
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Collector – Base
Voltage Emitter – Base
Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown
Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown
Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV — ICEX — 0.1 0.1 µAdc — µAdc — Vdc — Vdc Vdc
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