MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBT1010LT1/D
Low Saturation Voltage PNP Silicon Drive...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBT1010LT1/D
Low Saturation
Voltage PNP Silicon Driver Transistors
Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. Low VCE(sat), < 0.1 V at 50 mA Applications LCD Backlight Driver Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 Unit Vdc Vdc Vdc mAdc
MMBT1010LT1 MSD1010T1
Motorola Preferred Devices
PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT
3 1 2
CASE 318–08, STYLE 6 SOT-23
3 2 1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
CASE 318D–04, STYLE 1 SC-59 Symbol PD(1) Max 250 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C BASE EMITTER
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range COLLECTOR
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation
Voltage ...