MMBF4416LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF4416LT1/D JFET VHF/UHF Amplifier Transistor MMBF4416LT1 2 SOURCE Motorola Preferred Device N–Channel 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBF4416LT1 = M6A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150°C) Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) V(BR)GSS IGSS — — VGS(off) VGS — – 1.0 1.0 200 – 6.0 – 5.5 Vdc Vdc 30 — Vdc nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VGS = 15 Vdc, VGS = 0) Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) 1. FR– 5 = 1.0 IDSS VGS(f) 5.0 — 15 1.0 mAdc Vdc  0.75  0.062 in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Tra...