MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
• S Prefix for Au...
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Source
Voltage
VDS 30 Vdc
Drain−Gate
Voltage
VDG
30 Vdc
Gate−Source
Voltage
VGS 30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max 225 1.8
Unit mW mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in.
http://onsemi.com
3
1 2
SOT−23 CASE 318 STYLE 10
2 SOURCE
3 GATE
1 DRAIN
MARKING DIAGRAM
XXX M G G
1 XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions se...