MMBD914L

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD914LT1/D High-Speed Switching Diode 3 CATHODE 1 ANODE MMBD914LT1 Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBD914LT1 = 5D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR — — CT VF trr — — — 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 — Vdc   0.062 in.   0.024 in. 99.5% alumina. Preferred devices are Motorola recommended choices for future use and best overall value. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes ...