JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4448HT/HTA/HTC/HTS SWITCHING D...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
MMBD4448HT/HTA/HTC/HTS SWITCHING DIODE
FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance
MMBD4448HT MMBD4448HTA MMBD4448HTC MMBD4448HTS
SOT-523
MARKING:A
MARKING:A6
A3 A6
MARKING:A7
A7 A7
MARKING:AB
AB AB
Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃
Parameter
Symbol
Limit
Non-Repetitive Peak Reverse
Voltage
VRM 100
Peak Repetitive Peak Reverse
Voltage
VRRM
Working Peak Reverse
Voltage
VRWM
80
DC Blocking
Voltage
VR
RMS Reverse
Voltage
VR(RMS)
57
Forward Continuous Current
IFM 500
Average Rectified Output Current
IO 250
Non-Repetitive Peak Forward Surge Current @t=8.3ms
IFSM
2.0
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature
Electrical Ratings @Ta=25℃
Parameter
Symbol
Pd RθJA TSTG
Min Typ
150 833 -55 ~+150
Max Unit
Unit V
V
V mA mA A mW ℃/W ℃
Conditions
Reverse breakdown
voltage
Forward
voltage
Reverse current Capacitance between terminals Reverse recovery time
VR 80 VF1 0.62 VF2 VF3 VF4 IR1 IR2 CT
trr
0.72 0.855 1.0 1.25 0.1 25 3.5
4
V V V V V μA nA pF
ns
IR=2.5 μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω
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1
C,Nov,2014
REVERSE CURRENT I (nA) R
FORWARD CURRENT I (mA) F
T a
=100℃
Typical Characteristics
Forw...