MMBD4448

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4448 SWITCHING DIODE FEATURES z Fast switching speed z Surface mount package ideally suited for automatic insertion z For general purpose switching applications z High conductance MARKING: KA3 SOT-23 1. A1NODE 2. N, C 3. C2ATHODE 3 KA3 KA3 Solid dot = Green molding compound device, if none, the normal device Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 75 DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 Forward Continuous Current IFM 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature Pd RθJA TSTG 350 357 -55 ~+150 Unit V V V mA mA A mW ℃K/W ℃ Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF1 VF2 VF3 VF4 IR1 IR2 CT trr Min. 0.62 Typ. Max. 0.72 0.855 1.0 1.25 2.5 25 4 Unit V V V V µA nA pF 4 ns Conditions IF=5mA IF=10mA IF=100mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 B,Nov,2014 Typical Characteristics FORWARD CURRENT I (mA) F Forward Characteristics 300 1000 REVERSE CURRENT I (nA) R =25℃ =100℃ 100 300 30 100 10 ...