MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ 0 V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA AEC Qualified and PPAP Capable NSV Prefix for Automo...
