MMBD330T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document BY MMBD110T1/D Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package which is designed for low–power surface mount applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Available in 8 mm Tape and Reel MMBD110T1 MMBD330T1 MMBD770T1 3 1 2 CASE 419A–02, STYLE 2 SOT-323/SC–70 MAXIMUM RATINGS Rating Reverse Voltage MMBD110T1 MMBD330T1 MMBD770T1 Symbol VR Value 7.0 30 70 120 – 55 to +125 – 55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C °C DEVICE MARKING MMBD110T1 = 4M MMBD330T1 = 4T MMBD770T1 = 5H Thermal Clad is a registered trademark of the Bergquist Company. Motorola Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc. 1996 1 MMBD110T1 MMBD330T1 MMBD770T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MMBD110T1 MMBD330T1 MMBD770T1 CT MMBD110T1 MMBD330T1 MMBD770T1 IR MMBD110T1 MMBD330T1 MMBD770T1 NF MMBD110T1 VF MMBD110T1 MMBD330T1 MMBD770T1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 20 13 9.0 250 200 200 dB — — — 0.88 0.9 0.5 1.0 1.5 1.0 nAdc Symbol V(BR)R 7.0 30 70 10 — — — — — pF Mi...