MMBD1704

MMBD1701/A / 1703/A / 1704/A / 1705/A Discrete POWER & Signal Technologies MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 3 1 85 2 1701 3 3 1703 1 2 NC 3 1 3 2 2 1704 1705 SOT-23 1 MMBD1701 MMBD1703 MMBD1704 MMBD1705 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 2 1 2 High Conductance Low Leakage Diode Sourced from Process 1T. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted Parameter Value 20 50 150 150 250 -55 to +150 150 Units V mA mA mA mA °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max MMBD1701/A /1703/A-1705/A* 350 2.8 357 Units mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ©1997 Fairchild Semiconductor Corporation...