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ML725B16F

Mitsubishi

2.5Gbps InGaAsP DFB LASER DIODE

MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML725B16F FEATURES /4 phase shifted ...


Mitsubishi

ML725B16F

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Description
MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML725B16F FEATURES /4 phase shifted grating structure Wide temperature range operation (-20ºC to 85ºC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 11GHz) DESCRIPTION ML7xx16 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1310nm. /4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML7xx16 can operate in the wide temperature range form -20ºC to 85ºC without any temperature control. APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Po IF VRL IRD VRD Tc Tstg Parameter Output power Laser forward current Laser reverse voltage PD forward current PD reverse voltage Operation temperature Storage temperature 2.5Gbps transmission Conditions CW Ratings 6 200 2 2 20 -20 ~ +85 -40 ~+100 Unit mW mA V mA V ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS Tc=25ºC Symbol Ith Iop Vop Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength p SMSR Side mode suppression ratio Beam divergence angle (parallel) CW CW,Tc=85ºC CW,Po=5mW CW,Po=5mW,Tc=85ºC CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc=-20ºC CW,Po=5mW,Tc=-20ºC CW,Po=5mW +85ºC +85ºC Conditions Limits Min. 0.18 1290 35 0.1 MITSUBISHI ELECTRIC Typ. 10 35 30 75 1.1 0.25 1310 45 25 30 11 100 10 Max. 15 50 40 100 1.8 1330 40 47 150 2.0 1.0 20 Unit mA mA mA mA V mW/mA nm dB deg. deg. ...




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