Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
ML-1CL3
DIMENSIONS
The ML-1CL3 is a high-power GaAlAs IRED mounted in...
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
ML-1CL3
DIMENSIONS
The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3©™ceramic package.
(Unit : mm)
FEATURES
¶U©™3 ceramic base ¶UPeak emission wavelength p=8Î 65nm ¶UWide beam angle 5°æ 3deg.
APPLICATIONS
¶UOptical switches ¶U Encoders ¶U OA
MAXIMUM RATINGS
Item
Reverse
voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I PD FP I Topr. Tstg. Tsol.
Rating
3 50 80 0.5 £≠ 20 °≠£´ 70 £≠ 20 °≠£´ 80 240
Unit
V mA mW A °… °… °…
*1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward
voltage Reverse current Peak emission wavelength Spectral bandwidth *3 Radiant intensity Half angle
(Ta=2° 5…)
Symbol
VF R I Îp ƒÎ PO ƒË
Conditions
F=50mA I VR=3V F=20mA I F=20mA I F=20mA I
Min.
Typ.
1.4 865 30 °æ 53
Max.
1.7 10
Unit.
V Ï A nm nm mV deg.
50
*3. Measured by tester of KODENSHI CORP.
- 1-
Infrared Emitting Diodes(GaAlAs)
ML-1CL3
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current Vs. Forward
voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
...
