MJU03N60CT

Chip Integration Technology Corporation MJU03N60CT 600V Super Junction Power MOSFET ■ Features High speed power switching 100% UIS tested, 100% Rg tested Εnhanced avalanche ruggedness Lead free, halogen free ■ Application SMPS Ηard switching and high speed circuit LED lighting Flyback ■ Main product characteristics VDS RDS(on),max ID 600V 1.35Ω 3A ■ Pin Description TO-251 Preliminary ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Current TC = 25OC Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche energy, single pulse Power Dissipation Operating and Storage Temperature L =4.0mH, TC =25OC TC = 25OC ■ Absolute Maximum Ratings PARAMETER Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Symbol ID VDS VGS IDM EAS PD TJ, TSTG MJU03N60CT 3 600 ±30 7 18 63 -55 to 150 UNIT A V V A mJ W OC Symbol RθJC RθJA MJU03N60CT 2 55 ...