MJH16212

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJH16212 PH: (561)283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-218 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING: Collector to Base Voltage BVCBO Collector to Emitter Voltage Emitter to Base Collector to Emitter Continuous Collector Current Peak Collector Current Power Dissipation TA = 25 °C Power Dissipation TC = 25 ° C Storage Temperature Operating Temperature Lead Temperature From Case ELECTRICAL CHARACTERISTICS TA @ 25 ° C PARAMETERS SYMBOL TEST CONDITIONS Collector to Base Voltage BVCBO Emitter to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current BVEBO BVCEO(sus) BVCEO BVCEV ICBO ICBO ICES ICES ICEV I EBO h FE h FE hFE h FE h FE VCE(sat) VCE(sat) VCE(sat) VBE(sat) IC = 5.5A IB = 2.2A IC = 3.0A IB = 400mA IC = 5.5A IB = 2.2A VCE = 1500V VBE = 0 VCE = 1200V VBE = 0 VEB = 8.0V IC = 1.0A VCE = 5.0V IC = 10A VCE = 5.0V IE = 1.0mA IC = 10mA IB = 0 BVCEV BVEBO BVCEO(sus) IC ICM PD PD Tstg TJ TL Vdc Vdc Vdc Vdc Adc Adc Watts Watts °C °C °C 1500 8.0 650 10 15 150 -55 to +125 -55 to +125 275 MIN TYP MAX UNIT Vdc Vdc Vdc Vdc Vdc mA 8.0 650 250 25 25 4.0 24 6.0 10 µA µA mA µA - w w Emitter Cutoff Current D.C. Current Gain Pulsed* D.C. Current ...