MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistor...
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose
amplifiers, low frequency switching and motor control applications.
Features
High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) Collector−Emitter Sustaining
Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21
Low Collector−Emitter Saturation
Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter
Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCEO
Max
150 200 250
Unit Vdc
Collector−Base
Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021
VCB
Vdc 150 200 250
Emitter−Base
Voltage
Collector Current − Continuous − Peak (Note 1)
VEB 5.0 Vdc
IC 15 Adc 30
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