isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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