MJE8503A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE8503A/D Advance Information MJE8503A* *Motorola Preferred Device SWITCHMODE™ Series NPN Bipolar Power Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Featuring 1500 Volt Collector-Base Breakdown Capability Fast Switching: 180 ns Typical Fall Times 450 ns Typical Crossover Times 1.2 µs Typical Storage Times Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 VCES POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS CASE 221A–06 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Collector Current — Peak (1) Collector Current — Continuous Collector Current — Peak Total Power Dissipation @ TC = 25°C @ TC = 100°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VCBO VEBO IC IB IBM PD Value 700 1500 1500 5.0 5.0 10 4.0 4.0 80 21 0.8 – 65 to +125 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 sec. (1) Pulse Test: P...