isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V ·DC Cur...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown
Voltage—
: V(BR)CEO = 80 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A
·Complement to Type MJE702T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
80
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
0.1
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W
MJE802T
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation
Voltage IC= 1.5A; IB= 30mA
VCE(sat)-2 Collector-Emitter Saturation
Voltage IC= 4A; IB=40mA
VBE(on)-1 Base-Emitter On
Voltage
IC= 1.5A; VCE= 3V
VBE(on)-2 Base-Emitter On
Voltage
IC= 4A; VCE= 3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 80V; IB= 0
VCB= 80V; IE=...