isc
Silicon NPN Darlington
Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown
Voltage—
: V(BR)CEO = 60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE701T ·Minimum Lot-to-Lot variations for robust dev...