MJE520

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 25 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJE520 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Vltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance CONDITIONS IC= 100μA ; IE= 0 IC= 100mA IE= 100μA ; IC= 0 IC= 500mA; IB= 50mA VCB= 50V; IE= 0 VEB= 4V; IC= 0 IC= 1 A ; VCE= 1 V IC= 50mA ; VCE= 10V IE= 0; VCB= 10V,ftest= 1MHz MJE520 MIN TYP. MAX UNIT 30 V 30 V 4 V 0.5 V 10 μA 10 μA 20 30 MHz 20 pF NOTIC...