MJE4351

isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4342/4343 APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE MJE4350 -100 VCBO Collector-Base Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 MJE4350 -100 VCEO Collector-Emitter Voltage MJE4351 MJE4352 -120 -140 MJE4353 -160 VEBO Emitter-Base Voltage -7 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous -5 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE4350 -100 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE4351 MJE4352 IC= -50mA ;IB= 0 -120 V -140 VCE(sat)-1 VCE(sat)-2 VBE(sat) MJE4353 Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= -8A; IB= -0.8A...