isc Silicon PNP Power Transistors
MJE4350/4351/4352/4353
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS...
isc Silicon PNP Power Transistors
MJE4350/4351/4352/4353
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353
·Low Saturation
Voltage ·Complement to the NPN MJE4340/4341/4342/4343
APPLICATIONS ·Designed for use in high power audio amplifier applications
and high
voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
MJE4350 -100
VCBO
Collector-Base
Voltage
MJE4351 MJE4352
-120 -140
MJE4353 -160
MJE4350 -100
VCEO
Collector-Emitter
Voltage
MJE4351 MJE4352
-120 -140
MJE4353 -160
VEBO
Emitter-Base
Voltage
-7
IC
Collector Current-Continuous
-16
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-5
PC
Collector Power Dissipation @ TC=25℃
125
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.0
UNIT ℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
MJE4350/4351/4352/4353
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
MJE4350
-100
VCEO(SUS)
Collector-Emitter Sustaining
Voltage
MJE4351 MJE4352
IC= -50mA ;IB= 0
-120 V
-140
VCE(sat)-1 VCE(sat)-2 VBE(sat)
MJE4353
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Saturation IC= -8A; IB= -0.8A...