MJE3440

MJE3440 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications. 1 3 2 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Power Dissipation at Tcase ≤ 25 C o Value 350 250 5 0.3 0.15 15 -65 to +150 150 Uni t V V V A A W o o St orage Temperature Max. Operating Junction Temperature C C June 1997 1/5 MJE3440 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 8.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEV I CEO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current G ain Small Signal Current Gain Transistor Frequency Collector-Base Capacitance Test Cond ition s V CB = 250 V V CE = 300 V V CE = 200 V V EB = 5 V Min. Typ . Max. 20 500 50 Un it µA µA µA µA V V V I EBO V CE(sat )∗ V BE(s at)∗ V BE ∗ h FE∗ hf e fT C CBO ∗ 20 I C = 50 mA I C = 50 mA I C = 50 mA I C = 2 mA I C = 20 mA I C = 5 mA f = 1 KHz I C = 10 mA f =...