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MJE340

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to the PNP MJE350 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designe...

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