isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V.
NPN Transistor
isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
75
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A ; VCE= 2V
VCB= 60V; IE= 0 VCB= 60V; IE= 0;TC= 150℃
VEB= 4V; IC=0
hFE
DC Current Gain
IC= 3A ; VCE= 2V
MJE2801T
MIN TYP. MAX UNIT
60
V
1.1
V
1.4
V
0.1 2.0
mA
1.0 mA
25
100
.