MJE200G (NPN), MJE210G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage...
MJE200G (NPN), MJE210G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low
voltage, low−power, high−gain audio amplifier applications.
Features
High DC Current Gain Low Collector−Emitter Saturation
Voltage High Current−Gain − Bandwidth Product Annular Construction for Low Leakage These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc
15 W 0.12 mW/_C
Total Power Dissipation @ TC = 25_C Derate above 25_C
PD 1.5 W
0.012
mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of thes...