isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching ...
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown
Voltage-
: V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1000
V
VCEO Collector-Emitter
Voltage
450
V
VEBO
Emitter-Base
Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PD
Total Power Dissipation@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Rresistance,Junction to Case
1.25 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
MJE18002
isc Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJE18002
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC=30mA; IB=0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Saturation
Voltage Collector-Emitter Saturation
Voltage
IC= 0.4 A ;IB= 40mA TC=125℃
IC= 1A ;IB= 0.2 A TC=125℃
VCE(sat)-3 Collector-Emitter Saturation
Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter Saturation
Voltage
IC= 0.4A; IB= 40mA
VBE(sat)-2 Base-Emitte...