MJE15032 (NPN), MJE15033 (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use as high−frequency drive...
MJE15032 (NPN), MJE15033 (PNP)
Complementary Silicon Plastic Power Transistors
Designed for use as high−frequency drivers in audio
amplifiers.
Features
High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter
Voltage Collector−Base
Voltage Emitter−Base
Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation
@ TC = 25_C Derate above 25_C
VCEO VCB VEB IC ICM IB PD
250 Vdc 250 Vdc 5.0 Vdc 8.0 Adc 16 Adc 2.0 Adc
50 W 0.40 W/_C
Total Power Dissipation @ TA = 25_C Derate above 25_C
PD 2.0 W
0.016
W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to + 150 _C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol RqJC
RqJA
Max 2.5 62.5
Unit _C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 201...