MJE13011

UNISONIC TECHNOLOGIES CO.,LTD MJE13011 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability 1 TO-220F *Pb-free plating product number: MJE13011L PIN CONFIGURATION www.DataSheet4U.com PIN NO. 1 2 3 PIN NAME BASE COLLECTOR EMITTER ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13011-TF3-T MJE13011L-TF3-T Package TO-220F Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 of 4 QW-R219-006,B MJE13011 PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC = 25 ) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS 450 400 400 7 10 3 80 +150 -40 ~ +150 UNIT V V V V A A W ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Switching Time SYMBOL VCBO VCEO VCEO (SUS) VEBO VCE (SAT) VBE (SAT) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20µs, Duty ≤ 2% MIN 450 400 400 7 TYP MAX UNIT V V V V V V mA mA µs µs µs 1.2 1.5 1.0 0.1 10 1.0 2.0 ...