MJE13005DF

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MJE13005DF TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB RATING 800 400 10 5 10 2 UNIT V V V A A PC 30 W Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage ICBO IEBO V(BR)CBO V(BR)EBO hFE(1) (Note) hFE(2) VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Collector Output Capacitance Cob Note : hFE Classification R : 18~27, O : 23~35 VCB=700, IE=0 VEB=9V, IC=0 IC=10mA, IE=0 IE=1mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz 2014. 2. 07 Revision No : 3 MIN. - 800 10 18 8 - TYP. 65 MAX. 10 10 35 0.5 0.6 1 1.2 1.6 - UNIT A A V V pF 1/4 MJE13005DF CHARACTERISTIC Transition Frequency Turn-On Time SYMBOL fT TEST CONDITION VCE=10V, IC=0.5A ton Storage Time tstg Fall Time Diode Forward Voltage *Reverse recovery...