E13005-225
®
Pb Free Plating Product
E13005-225
MJE Power Transistor
Pb
Silicon NPN Power Transistor
DESCRIPTION
P...
E13005-225
®
Pb Free Plating Product
E13005-225
MJE Power Transistor
Pb
Silicon NPN Power Transistor
DESCRIPTION
Product specification
MJE13005 series
Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. Absolute Maximum Ratings ( Ta = 25℃ )
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
1. B
2. C
3. E
l VCBO VCEO VEBO IC IB Ptot Tj Tstg
Value 700 400 9 4.0 2.0 70 150 -55~150
Unit V V V A A W
o o
C
Storage Temperature
C
Unit:mm
Electrical Characteristics ( Ta = 25℃ )
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining
Voltage DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Current Gain Bandwidth Product Turn Off Time Symbol Test Conditions VCE=700V, IE=0 VEB=6.0V, IC=0 IC=10mA, IB=0 VCE=5V, IC=1.0A Min. — — 400 15 — — 4 2.0 Typ. — — — — — — — 2.5 Max. 10 10 — 30 1.5 1.6 — 4.0 V V MHz us Unit uA uA V
ICBO IEBO VCEO hFE
VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS
VCE=10V, IC=0.5A IB1=-IB2=0.5A,
Page 1/1
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
...