MJD5731

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VEB IC ICM PD Max 350 5 1.0 3.0 15 0.12 Unit Vdc Vdc Adc Adc W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.56 W 0.0125 W/°C Unclamped Inductive Load Energy (See Figure 10) E 20 mJ Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 80 °C/W Lead Temperature for Soldering TL 260 °C 2. These ratings are applicable when su...