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MJD44E3

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlington Power Transistor MJD44E3 DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching application...

Inchange Semiconductor

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