MJD122

Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD127. Production specification MJD122 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC Tj ,Tstg Collector-Base Volage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base Current Collector Power Dissipation Junction and Storage temperature range 100 100 5 8 16 120 1.5 -65 to +150 V V V A A mA W ℃ V/(W)029 Rev.A www.gmesemi.com 1 Production specification Epitaxial Planar NPN Transistor MJD122 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter sustaining voltage VCEO(sus) IC=30mA,IB=0 100 V Collector cut-off current ICEO VCE=50V,...