SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L.
MAXIMUM RATING (Ta=25 )
CHARACTERI...