MJD112L

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C K H F F 1 2 3 1. BASE 2. COLLECTOR 3. EMITTER E B D M I J P L O DIM A B C D E F H I J K L M O P Q MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1 1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10 0.95 MAX DPAK Q A C H G F F 123 K E B D I J DIM MILLIMETERS A 6.60+_ 0.2 B 6.10+_ 0.2 C 5.0+_ 0.2 P D 1.10+_ 0.2 E 9.50+_ 0.6 F 2.30+_ 0.1 G 0.76+_ 0.1 H 1.0 MAX I 2.30+_ 0.2 J 0.5+_ 0.1 L K 2.0+_ 0.2 L 0.50+_ 0.1 P 1.0 +_0.1 Q 0.90 MAX R1 = 10kΩ R2 = 0.6kΩ E 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current VCEO(SUS) ICEO ICBO IEBO DC Current Gain...