MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
Complementary Power Transistors
D2PAK for Surface ...
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
Complementary Power Transistors
D2PAK for Surface Mount
Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power
amplifiers.
Features
Low Collector−Emitter Saturation
Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector−Emitter
Voltage
Emitter−Base
Voltage
Collector Current − Continuous − Peak
Symbol VCEO VEB
IC
Value 80
5
10 20
Unit Vdc Vdc Adc
Total Power Dissipation @ TC = 25°C Derate above 25°C
PD
50
W
0.4
W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
2.0 0.016
−55 to 150
W W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
°C/W
Thermal Resistance, Junction−to−Ambient RqJA
75
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implie...