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MJ400 Datasheet

Part Number MJ400
Manufacturers Seme LAB
Logo Seme LAB
Description Bipolar NPN Device
Datasheet MJ400 DatasheetMJ400 Datasheet (PDF)

MJ400 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 325V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 .

  MJ400   MJ400






Part Number MJ4035
Manufacturers Motorola
Logo Motorola
Description Power Transistor
Datasheet MJ400 DatasheetMJ4035 Datasheet (PDF)

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  MJ400   MJ400







Part Number MJ4035
Manufacturers Semelab
Logo Semelab
Description SILICON DARLINGTON NPN TRANSISTOR
Datasheet MJ400 DatasheetMJ4035 Datasheet (PDF)

SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 100V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 16A IB Base Current 0.

  MJ400   MJ400







Part Number MJ4035
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet MJ400 DatasheetMJ4035 Datasheet (PDF)

MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current .

  MJ400   MJ400







Part Number MJ4035
Manufacturers Comset Semiconductors
Logo Comset Semiconductors
Description (MJ4033 - MJ4035) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
Datasheet MJ400 DatasheetMJ4035 Datasheet (PDF)

NPN MJ4033 – MJ4034 – MJ4035 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The complementary PNP types are the MJ4030, MJ4031, MJ4032. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings http://www.DataSheet4U.net/ Value MJ4.

  MJ400   MJ400







Part Number MJ4035
Manufacturers SavantIC
Logo SavantIC
Description (MJ4033 - MJ4035) SILICON POWER TRANSISTOR
Datasheet MJ400 DatasheetMJ4035 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·Respectively complement to type MJ4030/4031/4032 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ4033/4034/4035 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ4033 VCBO Col.

  MJ400   MJ400







Bipolar NPN Device

MJ400 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 325V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 325 0.25 Units V A Hz @ 10.0/0.05 (VCE / IC) 30 15M 300 2.5 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact [email protected]. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 1-Aug-02 .


2005-05-07 : MJ11021    MJ11021    MJ11021    MJ11022    MJ11022    MJ11028    MJ11028    MJ11028    MJ11029    MJ11029   


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