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MJ16110

Part Number	MJ16110
Manufacturer	ON
Description	NPN Silicon Power Transistors
Published	May 7, 2005
Detailed Description	ON Semiconductort NPN Silicon Power Transistors SWITCHMODEt Bridge Series . . . specifically designed for use in half ...
Datasheet	MJ16110 PDF File

Overview

ON Semiconductort NPN Silicon Power Transistors SWITCHMODEt Bridge Series .
.
.
specifically designed for use in half bridge and full bridge off line converters.
• Excellent Dynamic Saturation Characteristics • Rugged RBSOA Capability • Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V • Collector–Emitter Breakdown — V(BR)CES — 650 V • State–of–Art Bipolar Power Transistor Design • Fast Inductive Switching: tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C • Ultrafast FBSOA Specified • 100_C Performance Specified for: RBSOA Inductive Load Switching Saturation Voltages Leakages ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating...

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